Дослідження узагальненого перетворювача іммітансу на польовому транзисторі при зміні полярності напруги на затворі

Abstract

Досліджено узагальнений перетворювач іммітансу на польовому транзисторі при позитивній та негативній полярності напруги на затворі від індуктивного іммітансу навантаження.

Generalized immittance converter (GIC) on field-effect transistor with a p-n-junction (JFET) and with positive and negative polarity voltage on the gate of inductive immittance load was studied. JFET is included in the scheme with common source. Physical equivalent circuit JFET at different voltage polarity on the gate was interpritated. Dependences of the input resistance of the load resistance at various gate voltage polarity was investigated. The diagrams of Volpert-Smit were built. The conditions under which JFET can be used as a converter and inverter of immittance without changing the connection circuit were specified. With the negative polarity of voltage on the gate JFET possesses properties of immittance inverter, with a positive polarity of voltage on the gate JFET possesses properties of immittance converter. In general, the structures of JFET with p-n junction is similar to the structures of UJT and IST, which allows in certain modes to describe it by the similar physical small-signal equivalent circuits. The main difference is in the length and resistance of the channel (base), which significantly affects the nature of the physical processes in it. Using the JFET in direct displacement of p-n junction it is necessary to describe the T-shaped equivalent circuit which is used for the bipolar transistor, the realized GIC possessing properties of immittance converter. Application of JFET as a converter or inverter of immittance without changing of the connection circuit is limited by the quantity of the immittance transformation and relative frequency Ω.